Molecular Beam Epitaxy System

Effusion Cell & Power Supply

• Metal deposition effusion cell
  - Max temperature : < 1800 °C
  - Crucible capacity and material : up to 200 cc and Al₂O₃, BN, PBNm etc.
  - Included UHV shutter and cooling shroud
• Power supply
  - DC power supply : 20A, 100V
  - Temperature control : PID control

Plasma Cell & Power Supply

• RF plasma cell
  - Crucible material : alumina (Al₂O₃)
• Power supply
  -300W RF generator with matching box
• Mass flow control
  - Mass flow controller for N₂ or O₂

Thin Film Deposition Control

• Thickness measurement : quartz crystal oscillation sensor
• Beam fluxmeter : micro ion gauge

Rheed Gun & Power Supply

• Switching power, output energy : max. 30kV at 1mA
• Filament power : max. 3A

Vacuum Chamber

• Cylindrical chamber
  - Diameter : OD355 ~ 1,000 mm (Substrate : up to OD600mm)
  - Height : 700 ~ 1,000mm

Vacuum Pumping and Measurement

• Low vacuum : dry pump and convectron gauge
• Ultra - high vacuum : 2 stage turbo molecular pump, Cryo pump, ion pump and ion gauge

Control System by PLC, PC with Touch Screen

Optional Parts

• Temperature controller for substrate heating
• LN2 or CW chiller for system cooling
• Ion pump for UHV condition
• Reflectance meter for in-situ quarter wave optical thickness control
• Loadlock system with automation sample transfer