E-beam Evaporation System

Specification

Single or Convertible E - Beam Source

• Hearth quantity : 1 ~12ea (Standard : 4,6ea)
• Crucible capactiy : 7 ~ 40cc (Special size above 40 up to 200cc)
  - Standard : 25cc (4 or 6 Pocket), 40cc (4 Pocket)
  - Special crucible : 200cc (156cc for UHV) for long time deposition
• Deflection angle : 180°, 270°
• Output power : 6, 10, 15, 20kW
• Dual or triple E-Beam source on one body
• Sequential or simultaneous E-Beam evaporation of two or three materials
• Very high evaporation rate in the case of same deposition material

Vacuum Chamber

• Cylindrical chamber
• Diameter : Ø500 ~ 1500mm
• Height : 800 ~ 1500mm
• Square chamber
• Various size
  (Order made after proposal to and discussion with customer)

Vacuum Pumping and Measurement

• Low Vacuum : dry pump and convectron gauge
• High Vacuum : turbo molecular pump, cryo pump and ion gauge
• Ultra - high Vacuum : turbo molecular pump, cryo pump and ion gauge

Control System by PLC, PC with Touch Screen

Thin Film Deposition Control

• IC-5 (or XTC, XTM) and PC Control
• Control process parameter
  - Program processes 50, total deposition layers 250, process materials 24
• Quartz crystal oscillation sensor
  - Single, dual or six sensor
• Optical monitoring system for optical multi-layers deposition
  - Range of measuring wavelength : 350~2000nm, resolution : 1nm
• Thickness monitoring and process control by PC programming
• Thickness monitoring and process speed control by PC Programming
• Large area deposition like a MgO for PDP
• Application to "In-line E-Beam evaporation system"
• Substrate size : square 20 up to 100 inch
• Film uniformity, <± 1.0 to 5.0%

Optional Parts

• Mass flow controller for reactive and plasma assistant gas
• Ion source and controller for plasma assisted deposition
• RF power supply for substrate pre-cleaning
• Temperature controller for substrate heating
• Thermal evaporator, 1 or 2 boat
• Effusion cell, 1 or 2 for doping
• Chiller for system cooling